Topics In Growth And Device Processing Of Iii-v Semiconductors

This work describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It also describes the use of carbon-doping and low damage dry etching tehniques that have proven indispensable in making reliable, high performance devices. These devices have many applications, such as in cordless telephones and high speed lightwave communication systems.