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This title is printed to order. This book may have been self-published. If so, we cannot guarantee the quality of the content. In the main most books will have gone through the editing process however some may not. We therefore suggest that you be aware of this before ordering this book. If in doubt check either the author or publisher’s details as we are unable to accept any returns unless they are faulty. Please contact us if you have any questions.
Silicon carbide and other group IV-IV materials in their amorphous,
microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in
the field. The purpose is to make available the current state
of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods,
characterization, and models explaining experimental findings. The volume
also contains the latest results in the exciting field of
SiGe/Si heterojunction bipolar transistors. The reader will find this
book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range
of reading potential applications of silicon carbide. It is essential
for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
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This title is printed to order. This book may have been self-published. If so, we cannot guarantee the quality of the content. In the main most books will have gone through the editing process however some may not. We therefore suggest that you be aware of this before ordering this book. If in doubt check either the author or publisher’s details as we are unable to accept any returns unless they are faulty. Please contact us if you have any questions.
Silicon carbide and other group IV-IV materials in their amorphous,
microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in
the field. The purpose is to make available the current state
of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods,
characterization, and models explaining experimental findings. The volume
also contains the latest results in the exciting field of
SiGe/Si heterojunction bipolar transistors. The reader will find this
book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range
of reading potential applications of silicon carbide. It is essential
for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.