Simulation, Fabrication and Characterization of Advanced MOSFETs

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The evolution of semiconductor has been growing since the first transistor was invented in 1900. The industry today is a very important market and worldwide sales for the past years has been growing rapidly and is now a multi-billion industry. In the industry, the main govern by the Moore’s rule. This lead to the industry answer by the creation of the International Roadmap for Semiconductor. In the past century, semiconductor transistors have moved rapidly and technology nodes have been shrinking every two years following Moore’s rule. Materials have been moving from bulk silicon to Silicon-on- Insulator wafers. In the past few years, technologists have come to a point where they have recognized that this shrinking phenomenon and high demand for the capability of the transistors in the semiconductor industry is coming to a halt if no new design or technology can be found. In order to overcome this halt, various new ideas have been proposed; among them the use of asymmetrical channel doping, multiple-gate MOSFETs and Silicon-on-Nothing MOSFETs. In this work, an overview of these ideas are presented via means of simulations and measurements where possible.