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Paperback

Marlow’s Tragedy of Edward the Second: With Introductory Remarks, Explanatory, Grammatical, and Philological Notes (1877)

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Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration.

Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growthLiquid phase epitaxy (LPE) growthMetal-organic vapour phase epitaxy (MOVPE)Molecular beam epitaxy (MBE)Alternative substratesMechanical, thermal and optical properties of MCTDefects, diffusion, doping and annealingDry device processingPhotoconductive and photovoltaic detectorsAvalanche photodiode detectorsRoom-temperature IR detectors

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MORE INFO
Format
Paperback
Publisher
Kessinger Publishing
Country
United States
Date
10 September 2010
Pages
140
ISBN
9781165592449

Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration.

Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growthLiquid phase epitaxy (LPE) growthMetal-organic vapour phase epitaxy (MOVPE)Molecular beam epitaxy (MBE)Alternative substratesMechanical, thermal and optical properties of MCTDefects, diffusion, doping and annealingDry device processingPhotoconductive and photovoltaic detectorsAvalanche photodiode detectorsRoom-temperature IR detectors

Read More
Format
Paperback
Publisher
Kessinger Publishing
Country
United States
Date
10 September 2010
Pages
140
ISBN
9781165592449