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Taking up where the first volume left off, this work provides coverage of the inhomogeneous semiconductor. It deals mainly with Si and GaAs, but also investigates other materials of theoretical and practical interest, such as Ge, other III-V and II-VI compounds, and amorphous SiH. Equipped with this source, physicists, semiconductor engineers, device engineers and fabrication engineers will have access to a vast reservoir of practical information on the design, production and operations of semiconductor devices. Containing references, summaries of mathematical tools, key equations and tables, and a detailed subject index of nearly 5000 entries, this volume aims to make specific information as easy to locate as it is to comprehend.
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Taking up where the first volume left off, this work provides coverage of the inhomogeneous semiconductor. It deals mainly with Si and GaAs, but also investigates other materials of theoretical and practical interest, such as Ge, other III-V and II-VI compounds, and amorphous SiH. Equipped with this source, physicists, semiconductor engineers, device engineers and fabrication engineers will have access to a vast reservoir of practical information on the design, production and operations of semiconductor devices. Containing references, summaries of mathematical tools, key equations and tables, and a detailed subject index of nearly 5000 entries, this volume aims to make specific information as easy to locate as it is to comprehend.