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Nanoscale Electronic Devices and Their Applications
Hardback

Nanoscale Electronic Devices and Their Applications

$151.99
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Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book:

Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices

Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs

Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices

Includes rigorous mathematical derivations of the semiconductor physics

Illustrates major concepts thorough discussions and various diagrams

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MORE INFO
Format
Hardback
Publisher
Taylor & Francis Ltd
Country
United Kingdom
Date
31 July 2020
Pages
219
ISBN
9780367407070

Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book:

Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices

Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs

Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices

Includes rigorous mathematical derivations of the semiconductor physics

Illustrates major concepts thorough discussions and various diagrams

Read More
Format
Hardback
Publisher
Taylor & Francis Ltd
Country
United Kingdom
Date
31 July 2020
Pages
219
ISBN
9780367407070