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      Cover image for Fabrication & Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications
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      Fabrication & Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications

      Pham Huynh Tram,Yoon Soon Fatt,Lim Kim Peng

      Presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University…

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