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Add to list Added to list Group IV Heterostructures, Physics and Devices (Si, Ge, C, Sn)
J.-M. Lourtioz (Institut d'Electronique Fondamentale, Universite de Paris-Sud, Orsay Cedex, France),G. Abstreiter (Institut de Electronique Fondamentale, Universite Paris-Sud, Orsay, France),B. Meyerson (IBM TJ Watson Research Center, Yorktown Heights, NY, USA)
Contains the majority of papers presented at Symposium D, ‘Group IV heterostructures, physics and devices (Si,Ge,C,a-Sn)’, of the Spring Meeting of the European Materials Research Society, held at the Congress…
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